Quantum Hall Effect-Insulator Transition in the InAs / GaAs System with Quantum Dots
Identifieur interne : 000556 ( Russie/Analysis ); précédent : 000555; suivant : 000557Quantum Hall Effect-Insulator Transition in the InAs / GaAs System with Quantum Dots
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Abstract
The InAs / GaAs structures consisting of quantum-dot layers with electronic properties typical of two-dimensional systems are investigated. It is found that, at a low concentration of charge carriers, the variable-range-hopping conductivity is observed at low temperatures. The localization length corresponds to characteristic quantum-dot cluster sizes determined using atomic-force microscopy (AFM). The quantum Hall effect-insulator transition induced by a magnetic field occurs in InAs / GaAs quantum-dot layers with metallic conductivity. The resistivities at the transition point exceed the resistivities characteristic of electrons in heterostructures and quantum wells. This can be explained by the large-scale fluctuations of the potential and, hence, the electron density. © 2003 MAIK Nauka / Interperiodica .
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<front><div type="abstract" xml:lang="en">The InAs / GaAs structures consisting of quantum-dot layers with electronic properties typical of two-dimensional systems are investigated. It is found that, at a low concentration of charge carriers, the variable-range-hopping conductivity is observed at low temperatures. The localization length corresponds to characteristic quantum-dot cluster sizes determined using atomic-force microscopy (AFM). The quantum Hall effect-insulator transition induced by a magnetic field occurs in InAs / GaAs quantum-dot layers with metallic conductivity. The resistivities at the transition point exceed the resistivities characteristic of electrons in heterostructures and quantum wells. This can be explained by the large-scale fluctuations of the potential and, hence, the electron density. © 2003 MAIK Nauka / Interperiodica .</div>
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